Photomask and pattern forming method used in a thermal flow process and semiconductor integrated circuit fabricated using the thermal flow process

ABSTRACT

The invention relates to a photomask for use in a thermal flow process in which: a photomask is prepared in which a plurality of exposure openings are formed; a resist is applied to the surface of a layer of a semiconductor integrated circuit that is to undergo processing; this resist is patterned by an exposure process through the photomask to form a plurality of openings in the resist that correspond to each of the exposure openings; and the patterned resist is then heated to cause each of the openings to shrink; wherein at least a portion of exposure openings among the plurality of exposure openings are formed in shapes that compensate for anisotropic deformation that occurs in the openings when the patterned resist is heated to cause each of the openings to shrink. Since the openings that are formed in the resist are provided in advance with shapes that compensate for the deformation that occurs when the openings shrink, these openings attain the proper shape after undergoing shrinking and deformation.

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] The present invention relates to a photomask used in a thermalflow process, a method of forming patterns used in a thermal flowprocess, and a semiconductor integrated circuit in which a portionhaving fine planar shapes is treated by a prescribed process throughopenings in a resist.

[0003] 2. Description of the Related Art

[0004] In recent years, fine-patterned semiconductor integrated circuitsconstructed by using thin-film techniques are being used for a varietyof purposes, and these constructions are increasing in fineness witheach year. As an example, photolithography is one technique forachieving fine patterning of the layers of a semiconductor integratedcircuit.

[0005] In a case of forming through-holes in the insulating film of asemiconductor integrated circuit, a resist is applied to the surface ofthe insulating film that is to undergo processing, and the resist isthen exposed using a photomask in which a plurality of exposure openingsare formed. The resist is then developed to form openings at the exposedportions, and this resist is used as a mask to etch the insulating filmthrough the openings.

[0006] This type of photolithography is used not only for the formationof through-holes described above but for various other purposes such asintroducing impurities into a semiconductor substrate and patterningwiring lines. In this type of photolithography, a photomask is formed inwhich the pattern that is to be exposed is enlarged in all directions,following which the exposure process is carried out with this photomaskusing reducing optics to expose a pattern of the desired dimensions onthe resist.

[0007] In this technique, a pattern that is finer than a prescribeddimension cannot be exposed due to the limits of optical resolution.However, there is now demand to reduce resist openings below theexposure limit dimensions, and the thermal flow process has beendeveloped as a means of realizing such a reduction.

[0008] Referring now to FIG. 1A-FIG. 2C, one example of the thermal flowprocess of the prior art is next described.

[0009] As shown in FIG. 1A, a DRAM (Dynamic Random Access Memory) thatis in the process of fabrication is first prepared as semiconductorintegrated circuit 100, which is the object of processing. Insemiconductor integrated circuit 100 that is here taken as an example,gate oxide film 102 is formed on the surface of semiconductor substrate101, and gate electrodes 103 and 104 of the transistor elements thatwill serve as memory cells are formed in a prescribed pattern on thesurface of this gate oxide film 102. Gate oxide film 102 is partitionedby element isolation regions 105 according to the positions of memorycells, and the space around gate electrodes 103 and 104 is filled withinterlayer dielectric film 106, which is a prescribed layer.

[0010] In semiconductor integrated circuit 100 which is taken as anexample here, contact hole 107 of a bit contact is formed from thesurface of interlayer dielectric film 106 to the surface of gate oxidefilm 102 at a position between the pair of gate electrodes 103 and 104,as shown in FIG. 2C. Photomask 111, in which is formed exposure opening110 that corresponds to this contact hole 107, is therefore prepared asshown in FIG. 1c.

[0011] The structure of this photomask 111 is such that shield film 113is formed on the underside of transparent base member 112 and exposureopening 110 is formed by partially removing this shield film 113. Thisexposure opening 110 is formed at position that corresponds to contacthole 107, and its dimensions in all directions are greater than thedimensions of contact hole 107.

[0012] Resist 115 is then applied to the surface of interlayerdielectric film 106, which is a prescribed layer of semiconductorintegrated circuit 100, to form a prescribed film thickness as shown inFIG. 1B, and the above-described photomask 111 is arranged parallel toand confronting the surface of resist 115 at a prescribed distance fromthe surface of resist 115.

[0013] In this configuration, resist 115 is exposed to light by exposuredevice (not shown in the figure) through exposure opening 110 ofphotomask 111, and as shown in FIG. 2A, this resist 115 is thendeveloped to form opening 116 that corresponds to exposure opening 110.In the photolithographic technique of the prior art, a contact hole isformed in interlayer dielectric film 106 of semiconductor integratedcircuit 100 through this opening 116 in resist 115.

[0014] However, since it is impossible to form contact hole 107 of adiameter that is still smaller than the dimension limited by exposureresolution, resist 115 that has been patterned as described hereinaboveis heated and softened in a thermal flow process to shrink opening 116as shown in FIG. 2B.

[0015] Since opening 116 of resist 115 thus attains a diameter that issmaller than the exposure limit dimension, an extremely small diametercontact hole 107 can be formed from the surface of interlayer dielectricfilm 106 to the surface of gate oxide film 102 by etching interlayerdielectric film 106 of semiconductor integrated circuit 100 throughopening 116 in resist 115.

[0016] Exposure opening 110 of photomask 111, which is used in theexposure process in the above-described thermal flow process, istherefore formed at dimensions that approach the limit dimensions of theexposure process and in a shape that is an enlargement in all directionsof opening 116 that has been shrunk by heating resist 115.

[0017] When the dimensions of exposure opening 110 approach the exposurelimit dimensions, the shape of an exposure beam that passes throughexposure opening 110 is deformed by such factors as diffraction. Theshape of the exposure of opening 116 in resist 115 is therefore roughlyoval in shape even though exposure opening 110 is square, and the shapeof opening 116 following the thermal flow process becomes approximatelycircular.

[0018] Since no problem is raised if the plan shape of contact hole 107that-is formed at the exposure limit dimensions as described above issubstantially circular, exposure opening 110 of photomask 111 istypically formed as a square in order to simplify design andfabrication. As a result, in a case in which the exposure dimension ofopening 116 in resist 115 is set to a circle of diameter “a”, exposureopening 110 of photomask 111 is formed as a square having sides oflength “a”.

[0019] In the interest of simplifying the explanation here, a case isdescribed in which the process of exposing resist 115 using photomask111 is carried out in equal proportions, but in a case in which theexposure process is performed in the above-described exposure limitdimensions, the pattern of openings of photomask 111 is typicallyexposed on resist 115 in a form that is reduced by reduction optics.

[0020] After forming opening 116 in resist 115 by an exposure processusing photomask 111 in the above-described thermal flow process, thisresist 115 is heated to shrink opening 116, whereby a process can beperformed on interlayer dielectric film 106 at dimensions that aresmaller than the exposure limit dimension.

[0021] Nevertheless, when resist 115 is heated and softened to shrinkopening 116 that was formed by the exposure process as describedhereinabove, opening 116 deforms as it shrinks due to the surfacetension of this resist 115. It has been confirmed by the inventors ofthis invention that this deformation occurs in accordance with thepositional relationships between the plurality of openings 116.Specifically, when shrinking a plurality of openings 116 by heatingresist 115, the degree of shrinkage at each of openings 116 that areclose to each other is smaller in the direction between openings 116while the degree of shrinking is greater in the direction orthogonal tothis direction.

[0022] In some types of high-integration DRAM referred to as “{fraction(1/4)} pitch DRAM,” for example, a plurality of contact holes 107 arearranged linearly in a direction that is inclined 45° from thedirections of arrangement of the bit lines and word lines. Photomask 111for forming such a plurality of contact holes 107 has a shape in which aplurality of square exposure openings 110 are arranged in a line in a45° direction, as shown in FIG. 3A.

[0023] When resist 115 is exposed using this type of photomask 111, aplurality of round openings 116 is thus arranged in a line in a 45°direction, as shown in FIG. 3B. When this resist 115 is heated andopenings 116 are caused to shrink, however, the degree of shrinkage inthe direction of arrangement is small, while the degree of shrinkage inthe direction orthogonal to this direction is great, and, as shown inFIG. 3C, each of openings 116 therefore forms an oval that is elongatedin the direction of arrangement of openings 116.

[0024] In a thermal flow process of the prior art, the formation ofopenings 116 of a desired shape in desired positions is problematic dueto deformation according to the positional relationship between theplurality of openings 116, as described in the foregoing explanation,and the proper realization of prescribed fine processing onsemiconductor integrated circuit 100 is therefore also problematic.

SUMMARY OF THE INVENTION

[0025] It is an object of the present invention to provide a photomaskthat can properly realize prescribed fine processing on a semiconductorintegrated circuit in a thermal flow process; a pattern forming methodthat can properly realize prescribed fine processing on a semiconductorintegrated circuit in a thermal flow process; and a semiconductorintegrated circuit in which prescribed fine processing is properlyrealized.

[0026] According to one aspect of the present invention, a photomask isused in a thermal flow process in which: a photomask is prepared inwhich a plurality of exposure openings are formed; a resist is appliedto the surface of the layer of a semiconductor integrated circuit thatis to undergo processing; the resist is patterned by an exposure processthrough the photomask to form a plurality of openings in the resist thatcorrespond to each of the exposure openings; and the resist in which thepatterning has been carried out is heated to cause each of the openingsto shrink; wherein at least a portion of the exposure openings among theplurality of exposure openings are formed in a shape that compensatesfor the anisotropic deformation that occurs in the openings when each ofthe openings is caused to shrink by heating the patterned resist. In thethermal flow process that uses the photomask of the present invention,when the resist that is applied to the surface of a layer of asemiconductor integrated circuit that is to undergo processing ispatterned by an exposure process by means of the photomask and aplurality of openings are formed in the resist that correspond to theplurality of exposure openings that are formed in the photomask, theseopenings are formed in a shape that compensates for the anisotropicdeformation that occurs when the resist is heated to cause each of theopenings to shrink. When the resist that has been thus patterned isheated and the openings are caused to shrink, these openings areanisotropically deformed as they shrink. However, since each of theopenings has been formed in advance in a shape that compensates for thisanisotropic deformation, the openings attain the proper shape aftershrinkage and deformation.

[0027] At least a portion of exposure openings among the plurality ofexposure openings may be formed in a shape that is elongated in adirection that is approximately orthogonal to the direction toward otherexposure openings that are close. At least a portion of exposureopenings among the plurality of exposure openings may also be enlargedin a direction that is approximately orthogonal to the direction towardother exposure openings that are close. The degree of enlargement ofsaid exposure openings becomes smaller as the distance among said otherexposure openings that are close becomes larger. When the plurality ofopenings that have been formed in this way are caused to shrink byheating the resist, the plurality of openings that neighbor each otherattain the proper shape upon shrinking because the degree of shrinkageis smaller in the direction toward other openings while the degree ofshrinkage is greater in the direction orthogonal to this direction dueto such factors as the surface tension of the resist.

[0028] At least a portion of the exposure openings among the pluralityof exposure openings are arranged in lines that are close together, andeach of the exposure openings that are arranged in these lines may beenlarged in the direction that is approximately orthogonal to thedirection of this arrangement.

[0029] The exposure openings may be formed in a rectangular shape inwhich the direction of enlargement is the direction in which the longsides extend.

[0030] Each of the exposure openings may be enlarged in substantiallyall directions, and at least a portion of the exposure openings amongthe plurality of exposure openings may be formed such that the degree ofenlargement is smaller in the direction toward other exposure openingsthan other directions that are close.

[0031] At least a portion of the exposure openings among the pluralityof exposure openings may be formed as rectangles in which the shortsides extend in the direction toward other exposure openings that areclose and the long sides extend in a direction that is approximatelyorthogonal to this direction.

[0032] The term “enlargement of the openings in the resist” in thisinvention assumes the dimensions before the openings are caused toshrink by the thermal flow process with respect to the final desireddimension of the openings that have been caused to shrink by the thermalflow process, and thus indicates that the dimensions of exposure of theresist are made greater.

[0033] For example, if the diameter of round openings that are caused toshrink by the thermal flow process is “a” and the openings are caused toshrink to “1/b” by the thermal flow process, the openings before beingcaused to shrink by the thermal flow process are circles having adiameter of “a×b,” but in the present invention, the exposure dimensionof the resist openings is made “a×b” or greater in the direction ofenlargement.

[0034] In addition, the term “enlargement of exposure openings in thephotomask” in the present invention means that, when forming openings ofa desired dimension in the resist, the exposure openings are made largerthan dimensions that are designed based merely on these openings. Forexample, in a case in which the diameter of circular openings that arecaused to shrink by the thermal flow process as described hereinabove is“a” and the openings are caused to shrink to “1/b” by the thermal flowprocess, the openings before being caused to shrink by the thermal flowprocess are circles of diameter “a×b.” If the exposure optics are equalpower, square exposure openings measuring “a×b” on each side would beformed in the photomask, but in the present invention, the exposureopenings that are formed in the photomask are rectangles in which theshort sides are “a×b” in length and the long sides are longer than“a×b.”

[0035] Furthermore, “approximately all directions” in the presentinvention means substantially all directions involved in the formationof the exposure openings and includes 360° of the two-dimensionaldirections that are parallel to the surface of the photomask, the fourdirections to the left and right and forward and rear that are parallelto the surface of the photomask, and the two directions that areparallel to the four sides of the exposure openings that are formed in arectangular shape.

[0036] The pattern forming method according to another aspect of thepresent invention is a pattern forming method used in a thermal flowprocess in which: a resist is applied to a surface of the layers of asemiconductor integrated circuit that is to undergo processing; theresist is patterned to form a plurality of openings in the resist; andthe resist that has been patterned is heated to cause each of theopenings to shrink; wherein at least a portion of exposure openingsamong said plurality of exposure openings are formed in shapes so thatsaid openings are caused to become corresponding desired shapes due toanisotropic deformation that occurs in said openings when said resistthat has been patterned is heated to cause said openings to shrink.

[0037] The pattern forming method according to another aspect of thepresent invention is a pattern forming method used in a thermal flowprocess in which: a photomask is prepared in which a plurality ofexposure openings are formed; a resist is applied to a surface of thelayers of a semiconductor integrated circuit that is to undergoprocessing; this resist is patterned by an exposure process through thephotomask to form a plurality of openings in the resist that correspondto the exposure openings; and the patterned resist is heated to causeeach of the openings to shrink; wherein the photomask of the presentinvention is used during the exposure process.

[0038] According to another aspect of the present invention, aprescribed portion of a semiconductor integrated circuit having fineplanar shapes is treated by a prescribed process through openings in aresist that have been formed by the method of forming patterns of theabove-described invention.

[0039] The above and other objects, features, and advantages of thepresent invention will become apparent from the following descriptionwith reference to the accompanying drawings which illustrate examples ofthe present invention.

BRIEF DESCRIPTION OF THE DRAWINGS

[0040] FIGS. 1A-1C and FIGS. 2A-2C are schematic vertical sectionfrontal views showing a semiconductor integrated circuit that is toundergo processing for explaining an example of a thermal flow processof the prior art;

[0041]FIG. 3A is a plan view showing an example of a photomask of theprior art;

[0042]FIG. 3B is a plan view showing a resist in which openings havebeen formed by exposure using the photomask shown in FIG. 3A;

[0043]FIG. 3C is a plan view showing the state of openings that havebeen caused to shrink by heating the resist shown in FIG. 3B;

[0044]FIG. 4A is a plan view showing one embodiment of the photomaskaccording to the present invention;

[0045]FIG. 4B is a plan view showing a resist in which openings havebeen formed by exposure using the photomask shown in FIG. 4A;

[0046]FIG. 4C is a plan view showing the state of openings that havebeen caused to shrink by heating the resist shown in FIG. 4B;

[0047]FIG. 5 is a characteristics chart showing the degree ofdeformation of the openings caused by heating of the resist;

[0048]FIG. 6A is a plan view showing the first modification of thephotomask according to the present invention;

[0049]FIG. 6B is a plan view showing the resist in which openings havebeen formed by exposure using the photomask shown in FIG. 6A;

[0050]FIG. 6C is a plan view showing the state of openings that havebeen caused to shrink by heating the resist shown in FIG. 6B;

[0051]FIG. 7 is a plan view showing an actual example of the dimensionsof each part of a photomask according to the present invention;

[0052]FIG. 8A is a plan view showing a modification of the exposurepattern formed on the resist;

[0053]FIG. 8B is a plan view showing the pattern of openings that areformed on the photomask of the prior art; and

[0054]FIG. 8C is a plan view showing the pattern of openings that areformed on a photomask of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0055] An embodiment according to the present invention will bedescribed below with reference to FIGS. 4A-4C and FIG. 5. Components ofthis embodiment that are identical to components of the above-describedexample of the prior art are identified by the same term, and detailedexplanation is omitted.

[0056] As shown in FIGS. 4A-4C, photomask 200 of this embodiment is alsoused to pattern resist 201 in a thermal flow process, and a plurality ofexposure openings 202 are formed corresponding to the processingpositions of a semiconductor integrated circuit (not shown in thefigure) that is to undergo processing.

[0057] In more detail, in the pattern forming method of this embodiment,for example, nine openings 203 arranged in three rows and three columnsare formed in resist 201, which is applied to the surface ofsemiconductor integrated circuit, as shown in FIG. 4C. The distancesbetween these openings 203 is relatively small in the direction fromfront to back (vertical direction in the figure) and relatively large inthe direction from left to right.

[0058] In the present embodiment as well, nine exposure openings 202 areformed on photomask 200 in three rows and three columns that are closeto each other in the front and rear directions but distant from eachother toward the right and left, as shown in FIG. 4A, but these exposureopenings 202 are formed in a shape that compensates for the anisotropicdeformation that occurs in openings 203 when resist 201 is heated tocause openings 203 to shrink.

[0059] In other words, in photomask 200 of this embodiment, each of theplurality of exposure openings 202 that are close to each other in thefront and rear directions but distant from each other toward the leftand right is formed in a rectangular shape, which is a square that hasbeen enlarged toward the right and left. As a result, in photomask 200of this embodiment, each of the plurality of exposure openings 202 thatare close to each other toward the front and rear and arranged in linesis enlarged toward the left and right, which are directions orthogonalto the direction of arrangement. As a result, these exposure openings202 are formed as rectangles having long sides that extend in the leftand right directions, which are the directions of enlargement, and thesides that extend in the front and rear directions toward the othernearby exposure openings 202 are therefore the directions in which theshort sides of these rectangles extend.

[0060] In the pattern forming method of this embodiment, however, eachof the plurality of exposure openings 202 of photomask 200 is actuallyenlarged in almost all directions compared to the dimensions of opening203 for the exposure process in resist 201. However, the degree ofenlargement of these exposure openings 202 is small in the front andrear directions that extend toward other closely neighboring exposureopenings 202, and exposure openings 202 are thus formed as shapes thatare expanded toward the left and right.

[0061] Exposure openings 202, which are arranged both toward the frontand rear and toward the right and left of photomask 200 as described inthe foregoing explanation, are also close to each other toward the rightand left, although not a's close as toward the front and rear, andexposure openings 202 are therefore also enlarged toward the front andrear, which is the direction orthogonal to the right and left. Asdescribed above, however, the degree of enlargement of exposure openings202 is great toward the left and right and small toward the front andrear, the degree of enlargement in each direction being inverselyproportional to the distance to a neighboring opening in that direction.

[0062] A brief explanation is next presented regarding a thermal flowprocess that uses photomask 200 of this embodiment in theabove-described construction.

[0063] First, resist 201 is applied to the surface of the semiconductorintegrated circuit that is to undergo processing, and this resist 201 isthen patterned by means of an exposure process by photomask 200.

[0064] Then, as shown in FIG. 4B, a plurality of openings 203corresponding to the plurality of exposure openings 202 of photomask 200are formed in resist 201. When this resist 201 is heated and each ofopenings 203 is caused to shrink, openings 203 of resist 201 attain asmall diameter that is less than the exposure limit dimensions, wherebya desired process can be performed in a fine area of a semiconductorintegrated circuit.

[0065] When resist 201 is heated and each of openings 203 is caused toshrink as described hereinabove, however, anisotropic deformation occursaccording to the positional relationship between these openings 203. Thedeformation of these openings 203 is believed to arise due to suchfactors as the surface tension of resist 201. When openings 203 arecaused to shrink by heating resist 201, the degree of shrinkage inopenings 203 that are close to each other is small in the directionstoward the other openings while the degree of shrinking is great in thedirection that is orthogonal to this direction, as shown in FIG. 5.

[0066] However, since exposure openings 202 in photomask 200 of thisembodiment are formed in shapes that compensate for the anisotropicdeformation of openings 203 as shown in FIG. 4A, openings 203 that areformed in resist 201 by an exposure process that uses this photomask 200are formed in an oval shape that is enlarged in the direction that issubstantially orthogonal to the direction toward other openings 203 thatare close, as shown in FIG. 4B. When the plurality of openings 203 thatare thus formed are caused to shrink by heating resist 201, openings 203assume a substantially circular shape as shown in FIG. 4C due to theoccurrence of anisotropic deformation according to the positionalrelation between the openings.

[0067] As a result, fine openings 203 can be formed in a proper shape inresist 201 in a thermal flow process that uses photomask 200 of thisembodiment, and appropriate processing can thus be realized in a finearea of semiconductor integrated circuit. In photomask 200 of thisembodiment, moreover, each of exposure openings 202 is formed as arectangle in which the right and left directions, which are thedirections of chief enlargement, are the directions in which the longsides extend, and the design and fabrication of of the photomask is thusfacilitated.

[0068] The present invention is not limited to the above-describedembodiment, and various modifications are possible in the scope orspirit of the invention. For example, in the above-described embodiment,an example was described in which openings 203 of a desired shape wereformed on resist 201 by a photolithographic technique using photomask200, but these openings 203 may also be formed on resist 201 by a directwriting technique that does not use photomask 200.

[0069] Although a case was described in the above-described embodimentin which openings 203 that were formed on resist 201 were arranged inlines extending toward the front and rear, openings 203 may alsoarranged linearly in a direction that is at an angle, as in thepreviously described example of {fraction (1/4)}-pitch DRAM of the priorart simply adapting the above-described photomask 200 to this type ofarrangement, however, means that the exposure openings that wereoriginally square must be enlarged in a direction that extends at anangle. The exposure openings must therefore be enlarged to form aparallelogram or diamond shape, and this complicates the design andfabrication of the photomask.

[0070] When this becomes a problem, a plurality of exposure openings 211of photomask 210 are formed in rectangular shapes in which the longsides extend in an oblique direction that is orthogonal to direction ofarrangement of these openings 211.

[0071] In this case, a plurality of openings 212 are formed as inclinedoval shapes in resist 201 as shown in FIG. 6B, and these oval openings212 are enlarged in directions that are orthogonal to the direction inwhich the openings are close to each other, whereby these openings 212become proper circles when caused to shrink by heating resist 201.

[0072] The inventors of the present invention actually producedphotomask 210 on an experimental basis in which openings 212 in resist201 were arranged in a 45° direction as described in the foregoingexplanation. In this case, the average diameter of openings 212 inresist 201 that were caused to shrink by heating resist 201 was set to0.15 μm, and the pitch toward the front and rear as well as to the rightand left of the plurality of openings 212 that were arranged in a 45°direction was set to 0.3 μm.

[0073] Taking into consideration the data of FIG. 5, exposure openings211 of photomask 210 were formed in rectangular shapes with short sidesof 0.23 μm and long sides of 0.4 μm as shown in FIG. 7, and it wasconfirmed that openings 212 were finally formed having substantially theabove-described dimensions.

[0074] In the above-described embodiment, an example was described inwhich regularly arranged openings 203 were formed in resist 201, but thepresent invention may also be adapted to a case in which irregularlyarranged openings 203 are formed in resist 201. It is also obvious thatthe conditions of deformation for openings of identical shape that arearranged in a line at uniform intervals as described hereinabove willdiffer for openings at the two ends and for openings in the centralarea.

[0075] However, the inventors designed photomask 222 in which all ofopenings 221 can be formed in proper shape assuming three openings 221having a diameter of 0.2 μm are arranged in resist 201 in a line at apitch of 0.35 μm as shown in FIG. 8A.

[0076] In a photomask of the prior art in such a case, three squareexposure openings measuring 0.2 μm on each side are arranged in a lineat a pitch of 0.35 μm as shown in FIG. 8B. In contrast, it was confirmedthat in photomask 222 of this invention, central exposure openings 223are preferably formed as rectangles measuring 0.24×0.30 μm and exposureopenings 223 at the two ends are preferably formed as rectanglesmeasuring 0.27×0.30 μm, as shown in FIG. 8C. In other words, in a casein which a plurality of exposure openings 223 are arranged in a line,the degree of enlargement in the direction of arrangement of exposureopenings 223 at both ends is preferably greater than the degree ofenlargement of exposure openings 223 in the central area.

[0077] Among the above-described embodiments, a case was described inwhich exposure openings 202 of photomask 200 were enlarged insubstantially all directions, i.e., toward the front, rear, left andright, with the degree of this enlargement for the front-rear directionsdiffering from that for the left-right directions. However, it is alsopossible for exposure openings 202 to be enlarged in only specificdirections.

[0078] While preferred embodiments of the present invention have beendescribed using specific terms, such description is for illustrativepurposes only, and it is to be understood that changes and variationsmay be made without departing from the spirit or scope of the followingclaims.

What is claimed is:
 1. A photomask for use in a thermal flow process inwhich: a photomask is prepared in which a plurality of exposure openingsare formed; a resist is applied to the surface of a layer of asemiconductor integrated circuit that is to undergo processing; saidresist is patterned by an exposure process through said photomask toform a plurality of openings in said resist that correspond to each ofsaid exposure openings; and said resist that has been patterned isheated to cause each of said openings to shrink; wherein at least aportion of exposure openings among said plurality of exposure openingsare formed in shapes so that said openings are caused to becomecorresponding desired shapes due to anisotropic deformation that occurswhen each of said openings is caused to shrink by heating said resist onwhich the patterning has been carried out.
 2. A photomask according toclaim 1 wherein at least a portion of exposure openings among saidplurality of exposure openings are formed in shapes that are elongatedin a direction that is approximately orthogonal to the direction towardother said exposure openings that are close.
 3. A photomask according toclaim 2 wherein at least a portion of exposure openings among saidplurality of exposure openings are enlarged in a direction that isapproximately orthogonal to the direction toward said other exposureopenings that are close.
 4. A photomask according to claim 3 wherein thedegree of enlargement of said exposure openings becomes smaller as thedistance among said other exposure openings that are close becomeslarger.
 5. A photomask according to claim 2 wherein at least a portionof exposure openings among said plurality of exposure openings arearranged in lines that are close together, and each of said exposureopenings that are arranged in these lines is enlarged in a directionthat is approximately orthogonal to the direction of said arrangement.6. A photomask according to claim 3 wherein said exposure openings areformed in rectangular shapes in which the direction of enlargement isthe direction in which the long sides extend.
 7. A photomask accordingto claim 2 wherein each of said exposure openings is enlarged insubstantially all directions, and at least a portion of exposureopenings among said plurality of exposure openings are formed such thatthe degree of enlargement is smaller in the direction toward otherexposure openings that are close than other directions.
 8. A photomaskaccording to claim 7 at least a portion of exposure openings among saidplurality of exposure openings are formed as rectangles in which theshort sides extend in the direction toward said other exposure openingsthat are close and the long sides extend a direction that isapproximately orthogonal to this direction.
 9. A method of formingpatterns for use in a thermal flow process in which: a resist is appliedto the surface of a layer of a semiconductor integrated circuit that isto undergo processing; said resist is patterned to form a plurality ofopenings in said resist; and said resist that has been patterned isheated to cause each of said openings to shrink; wherein at least aportion of exposure openings among said plurality of exposure openingsare formed in shapes so that said openings are caused to becomecorresponding desired shapes due to anisotropic deformation that occursin said openings when said resist that has been patterned is heated tocause said openings to shrink.
 10. A method of forming patternsaccording claim 9 wherein at least a portion of openings of saidplurality of openings are formed in shapes that are elongated in adirection that is approximately orthogonal to the direction toward othersaid openings that are close.
 11. A method of forming patterns accordingto claim 10 wherein at least a portion of openings among said pluralityof openings are enlarged in a direction that is approximately orthogonalto the direction toward other said openings that are close.
 12. A methodof forming patterns according to claim 11 wherein the degree ofenlargement of said openings is in inverse proportion to the distance tosaid other exposure openings that are close.
 13. A method of formingpatterns according to claim 10 wherein, when at least a portion ofopenings among said plurality of openings are arranged in lines that areclose together, each of said openings that are arranged in these linesis enlarged in a direction that is approximately orthogonal to thedirection of said arrangement.
 14. A method of forming patternsaccording to claim 11 wherein said openings are formed in rectangularshapes in which the direction of enlargement is the direction in whichthe long sides extend.
 15. A method of forming patterns according toclaim 10 wherein at least a portion of openings among said plurality ofopenings are enlarged in substantially all directions such that thedegree of enlargement is smaller in the direction toward other openingsthat are close than other directions.
 16. A method of forming patternsaccording to claim 15 wherein at least a portion of openings among saidplurality of openings are formed as rectangles in which the short sidesextend in the direction toward said other openings that are close andthe long sides extend in a direction that is approximately orthogonal tothis direction.
 17. A method of forming patterns for use in a thermalflow process in which: a photomask is prepared in which a plurality ofexposure openings are formed; a resist is applied to the surface of alayer of a semiconductor integrated circuit that is to undergoprocessing; said resist is patterned by an exposure process through saidphotomask to form a plurality of openings in said resist that correspondto each of said exposure openings; and said resist that has beenpatterned is heated to cause each of said openings to shrink; whereinsaid method of forming patterns uses the photomask according to claim 1in said exposure process.
 18. A semiconductor integrated circuit inwhich a prescribed portion having fine planar shapes is treated by aprescribed process through openings in a resist that have been formed bya method of forming patterns according to claim 9.